| 摘要 |
PROBLEM TO BE SOLVED: To deal with the voltage higher than the source-drain breakdown voltage by connecting the gate to the 1st node or either the source or the drain at a prescribed voltage level and the other to a 2nd node respectively in regard to a transistor circuit. SOLUTION: When a signal IN is kept low, the MOS transistor TR 6 and 7 are turned off with the MOS TR 4 and 5 turned on respectively. Thus, a signal OUT is set at 15 V to 17 V by the voltage Vpp. Then a MOS TR 3 is turned on with the MOS TR 1 and 2 turned off respectively. Thereby, the high voltage of 15 V to 17 V is applied to both ends of the source of the TR 1 and the drain of the TR 2. Meanwhile, the voltage of 10 V to 12 V is applied between the source and the drain of the TR 1 with the voltage V-Vth applied between the source and the drain of the TR 2 respectively. As a result, the high voltage generated by the voltage Vpp is reduced and applied between the source and the drain of both TR 1 and 2 respectively. |
