发明名称 MARK FOR MEASURING OVERLAP ERROR AND CORRETING METHOD USING THE SAME
摘要 <p>A mask set for measuring an overlapping error according to the invention comprises a first mask consisted of a mask substrate on which a plurality of unit patterns are formed: The plurality of unit patterns are arranged in radial shape round a given center. The mask set of the present invention further comprises a second mask consisted of a mask substrate on which a plurality of unit patterns are formed. The plurality of unit patterns of the second mask are arranged in same shape as the plurality of unit patterns of the first mask, whereby when the first and second masks are overlapped to each other, the unit pattern of the first mark and the neighboring unit pattern of the second mask maintains a certain angle.</p>
申请公布号 KR100223272(B1) 申请公布日期 1999.10.15
申请号 KR19960074999 申请日期 1996.12.28
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 PARK, KI-IYUP
分类号 H01L21/027;G03F9/00;G06F17/50;H01L21/00;H01L23/544;(IPC1-7):H01L21/027 主分类号 H01L21/027
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