DELAY CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE,申请号KR19960080076-传众专利搜索

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发明名称	DELAY CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR100224678(B1)	申请公布日期	1999.10.15
申请号	KR19960080076	申请日期	1996.12.31
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	OH, SEONG CHUL
分类号	G11C11/34;(IPC1-7):G11C11/34	主分类号	G11C11/34
代理机构		代理人
主权项
地址

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