| 摘要 |
PROBLEM TO BE SOLVED: To obtain an image sensor IC which reduces a manufacturing price and can make an extremely thin chip by forming an LOCOS separation layer between the edge of the main scanning direction of a linear image sensor IC which is the nearest to the row of photodetective elements and the light receiving part of the photodetective elements. SOLUTION: The LOCOS separation layer is formed between the edge of the main scanning direction of the linear image sensor IC which is the nearest to the row of the photodetective elements and the light receiving part of the photodetective elements. This image sensor IC forms a P-base diffusion layer 112, a P + diffusion layer 113, an N + diffusion layer 114, an LOCOS oxide film 115, etc., on an N-silicon substrate 111. The layer 114 is fixed to a power source voltage through AL 117 to stabilize the potential of the substrate 111 being the collector region of a phototransistor. An intermediate insulating layer 118, etc., is formed on the layer 113. A distance L between a chip edge 120 and the layer 112 can be made shorter than 40μm by this structure.
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