| 摘要 |
PROBLEM TO BE SOLVED: To provide a TFT(thin-film transistor) and its manufacturing method by which ON-state current can be improved by forming a channel in consideration of the crystal structure of a polycrystalline semiconductor film formed of amorphous semiconductor film. SOLUTION: In a TFT 1, a channel formation area 3 is formed of a polycrystalline semiconductor film 301 which is formed by crystallizing an amorphous semiconductor film and has a columnar structure where a column axis A is directed toward the outside of the surface of a board 8. A gate electrode is opposite to a side end face 302 almost parallel to the prism axis A of the polycrystalline semiconductor film 301 constituting the channel formation area 3, with a gate insulation film 6 in between. |
