| 摘要 |
<p>A plurality of transistor cells (36) formed on a semiconductor substrate (32) are connected to form a radio frequency power transistor device (30), whereby individual conductive paths (38) are formed on one side of the substrate (32) to connect respective common gate terminals (34) of adjacent transistor cells (36) in series. A further conductive path (40) is formed on an opposite side of the substrate connecting respective drain terminals (35) of the transistor cells (36) in parallel. A resistive element (42) is interposed in the conductive path (38) connecting each adjacent pair of gate terminals (34). The conductivity of the respective resistive elements (42) is selected so as to adequately provide a conductive pathway for connecting the respective gate terminal outputs, while being sufficiently resistive such that each gate terminal (34) 'sees' an electrical circuit termination.</p> |
