Heterojunction bipolar transistor especially a high output power HBT with a multi-finger structure used in high frequency and high power components

摘要

A heterojunction bipolar transistor (HBT), having a gallium arsenide ballast resistive layer between its gallium arsenide emitter layer and its emitter electrode, is new. An HBT has a GaAs substrate bearing a succession of a GaAs collector layer, a GaAs base layer, an InGaP spacer layer, a GaAs emitter layer and a top emitter electrode, a GaAs ballast resistive layer being provided between the emitter layer and the emitter electrode.