HEAT TREATMENT METHOD FOR SEMICONDUCTOR SUBSTRATES

摘要

The invention concerns a method for treating a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).