| 摘要 |
A power consumption of a semiconductor device capable of performing any one of a plurality of functions selectively according to whether or not a predetermined bonding pad thereof is bonded to a power source line or a ground line is reduced during an idle time thereof. The potential of the bonding pad when the latter is in a floating state is driven to a certain level by a current flowing through a P-type MOS transistor having relatively large capability during a predetermined time from an initial application of power supply voltage to the semiconductor device. Thereafter, the bonding pad is biased by a P type MOS transistor having smaller capability. <IMAGE> |
