| 摘要 |
PROBLEM TO BE SOLVED: To make nondestructive measurement of a semiconductor device by feeding current having different current density in a plurality of runs, measuring the voltage, determining the increase in the resistance, and determining the mean grain size of wiring to be measured. SOLUTION: A semiconductor device fitted with wiring for measuring 4 is set in a constant temp. chamber 3, and a constant current power supply 1 is connected with each end of the wiring 4, and current is fed. The voltages at the two ends of the wiring 4 are measured by a voltage monitor 2. The fed current should be of pulsated form with a duty of approx. 1% or below so as to suppress temp. rise of the wiring 4. The current density in the wiring 4 is varied gradually to 1×10<4> thru 1×10<7> A/cm<2> , and at the same time, the end voltages of the wiring 4 are measured by the voltage monitor 2. From the measuring results, the current density J and resistance incrementΔR are determined, and the mean grain size (a) is calculated from an expressionΔR= C.aTJ<2> , where T is absolute temp. at time of measuring and C is a constant. This requires only simple electric characteristics and can manage without use of a convergence ion beam device which requires time and cost, and the semiconductor device can be measured non-destructively.
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