发明名称 Semiconductor element and its manufacturing method
摘要 <p>In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.</p>
申请公布号 EP0949685(A2) 申请公布日期 1999.10.13
申请号 EP19990105253 申请日期 1999.03.15
申请人 CANON KABUSHIKI KAISHA 发明人 SAITO, KEISHI;SANO, MASAFUMI
分类号 H01L31/0368;H01L31/052;H01L31/076;H01L31/20;(IPC1-7):H01L31/036;H01L31/037;H01L31/075;H01L31/18 主分类号 H01L31/0368
代理机构 代理人
主权项
地址