| 发明名称 |
Nitride semiconductor laser device |
| 摘要 |
<p>The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode (100); and a protective layer (20a,20b) formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBzN (where 0</=x, y, z</=1 and 0</=x+y+z</=1), which is transparent to light emitted from the laser diode (100). <IMAGE></p> |
| 申请公布号 |
EP0949731(A2) |
申请公布日期 |
1999.10.13 |
| 申请号 |
EP19990106798 |
申请日期 |
1999.04.06 |
| 申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
ITOH, KUNIO;YURI, MASAAKI;HASHIMOTO, TADAO;ISHIDA, MASAHIRO |
| 分类号 |
H01S5/028;H01S5/10;H01S5/343;(IPC1-7):H01S3/19;H01S3/025 |
主分类号 |
H01S5/028 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
