| 摘要 |
<p>In a semiconductor device, in order to protect an interior of the device, protective circuits are provided. The protective circuits include a first circuit (H11) connected between the first terminal (T1) and a negative potential line, a second circuit (H13) connected between the first terminal (T1) and a ground potential line, and a third circuit (H12) connected between the ground potential line and a second terminal (T2). The first circuit consists of a MOS transistor (H11) having a drain (10) connected with the first terminal (T1), a source (8) connected with the negative potential line, and a gate (9) connected with the first terminal (T1) or the negative potential line. The second circuit consists of a MOS transistor (H13) having a drain (10) connected with the first terminal (T1), a source (19) connected with the ground potential line, and a gate (18) connected with the first terminal (T1) or the ground potential line. The third circuit consists of a MOS transistor (H12) having a drain (13) connected with the second terminal (T2), a source (11) connected with the ground potential line, and a gate (12) connected with the second terminal (T2) or the ground potential line. <IMAGE></p> |
