发明名称 |
Metod för framställning av en pn-övergång för en halvledaranordning av SiC samt en halvledaranordning av SiC med pn-övergång |
摘要 |
A method for producing a pn-junction for a semiconductor device of SiC intended to have at least one lateral zone of junction termination with a lower doping concentration of a first conductivity type than a main zone for smearing out the electrical field at said junction comprising at least the step of applying a first layer of SiC over the entire surface and on top of a second layer of SiC. A mask is applied on the first layer over a portion thereof where said main zone and an ohmic contact are to be formed. It is after that etched through the first layer to the second layer while leaving a main zone of said first layer and a contact layer thereof under said mask. |
申请公布号 |
SE9802909(L) |
申请公布日期 |
1999.10.13 |
申请号 |
SE19980002909 |
申请日期 |
1998.08.31 |
申请人 |
ABB RESEARCH LTD |
发明人 |
NILSSON PER-AAKE |
分类号 |
H01L21/04;H01L29/24;H01L29/861;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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