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发明名称
HIGH DENSITY TRENCH DMOS TRANSISTOR WITH TRENCH BOTTOM IMPLANT
摘要
申请公布号
EP0948818(A1)
申请公布日期
1999.10.13
申请号
EP19970934104
申请日期
1997.07.18
申请人
SILICONIX INCORPORATED
发明人
HSHIEH, FWU-IUAN;FLOYD, BRIAN, H.;CHANG, MIKE;NIM, DANNY;NG, DANIEL
分类号
H01L21/336;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L29/76
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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