Inductor and method of manufacturing the same

摘要

A method for manufacturing an inductor. A silicon substrate of a first conductive type is provided. A spiral conductive layer is formed over the silicon substrate. A doped region of a second conductive type is formed in the substrate below the spiral conductive layer. A doped region of the first conductive type is next formed in the substrate around the doped region of the second conductive type. A reverse-bias voltage is applied to the doped region of the first conductive type and the doped region of the second conductive type. The application of a reverse-bias voltage creates a depletion region beneath the doped region of the second conductive type and the space between the doped regions.