| 摘要 |
There is disclosed a method for producing a silicon single crystal by Czochralski method which comprises bringing a seed crystal into contact with a melt, performing a necking operation and growing a single crystal ingot characterized in that concentration of interstitial oxygen incorporated during the necking operation is 1 ppma (JEIDA) or more. There can be provided a method of producing a silicon single crystal wherein the rate of success in making a crystal dislocation free is improved in a seeding method wherein a necking operation is performed. |
