| 发明名称 |
Ferroelectric memory device with improved ferroelectric capacitor characteristics |
| 摘要 |
<p>A ferroelectric memory device includes a ferroelectric capacitance element formed through an insulating film (9) on a semiconductor substrate (1). The ferroelectric capacitance element includes a lower electrode (3), a ferroelectric film (4) formed on the lower electrode, and an upper electrode (5) formed on the ferroelectric film. The upper electrode has a laminate structure which contains a conductive oxide layer of first metal which is connected with the ferroelectric film. <IMAGE></p> |
| 申请公布号 |
EP0949682(A2) |
申请公布日期 |
1999.10.13 |
| 申请号 |
EP19990302745 |
申请日期 |
1999.04.08 |
| 申请人 |
NEC CORPORATION |
发明人 |
SHINOHARA, SOTA;AMANUMA, KAZUSHI;MURAO, YUKINOBU;KATOH, YUUKOH;TAKEUCHI, TSUNEO;HAYASI, YOSHIHIRO |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/8247 |
| 代理机构 |
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