| 摘要 |
A semiconductor laser includes an n-type GaAs current blocking layer formed at both sides of a stripe portion made of an upper-lying portion of a p-type AlGaInP cladding layer, p-type GaInP intermediate layer and p-type GaAs cap layer to form a current blocking structure, and the p-type AlGaInP cladding layer has a thickness d1 at both sides of the stripe portion and a thickness d2 outside them (0<d1<d2) to effect optical guide by transversely changing refractive indices. In this case, the semiconductor laser has a refractive index n1 in the stripe portion, a refractive index n2 at both sides of the stripe portion, and a refractive index n3 in further outer sides (n2<n3<n1). Width WG of a gain region inside a GaInP active layer and width WP of an optical guide region (WG<WP) are controlled independently, and a saturable absorbing region with a sufficient area is ensured.
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