| 摘要 |
A method of fabricating a nonvolatile semiconductor memory includes an oxide area forming step, a word line forming step, an etching step and a source area forming step in turn. In the oxide area forming step, oxide areas are formed in parallel bands. In the word line forming step, word lines are formed in parallel and perpendicularly to the oxide bands formed in the oxide area forming step. In the etching step, oxides, existing in areas between pairs of adjacent word lines in which source regions are to be formed, are etched, whereby field areas are created from the oxide areas. And in the source area forming step, areas functioning as source regions and source lines are formed between the word line pairs by doping impurity into the semiconductor substrate.
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