Metal impurity neutralization within semiconductors by fluorination

摘要

Fluorination can be used to neutralize transition metal impurities in Si. Fluorine is incorporated into the near-surface region of Si by implantation or annealing in a fluorine containing ambient. Thermal treatments at appropriate temperatures are used to initiate the interdiffusion and reaction between fluorine and metal contaminants. The impurities readily react with fluorine to form a compound or complex, thus significantly reducing the number of mid-gap impurities.