发明名称 Method of optimizing an N-gram memory structure
摘要 By placing a low cardinality node or a leaf in a lower level, and a high cardinality node or a leaf at a higher level, an optimal memory structure is automatically generated which yields the best compression within N-gram technology. After making an initial list of parallel streams or fields, the streams are ordered in accordance with increasing cardinality. Adjacent streams (fields), or nodes, are paired, and the children of the resulting node are eliminated from the list, while a new parent node is added to the list. The resulting new list is re-arranged from right to left as a function of increasing cardinality, and the pairing steps are repeated until a single root node is remains for the final memory structure.
申请公布号 US5966709(A) 申请公布日期 1999.10.12
申请号 US19970939023 申请日期 1997.09.26
申请人 TRIADA, LTD. 发明人 ZHANG, TAO;BUGAJSKI, JOSEPH M.;RAGHAVAN, K. R.
分类号 G06F17/30;H03M7/30;(IPC1-7):G06F17/30 主分类号 G06F17/30
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