| 摘要 |
A thin-film transistor has a channel having a plurality of branch channels, and a gate having a plurality of branch gates. At least one of or all of the branch channels are surrounded by the branch gates in a three dimensional way. That is, the branch channels and the branch gates are formed so as to intersect each other in a three-dimensional space so that the branch channels are surrounded by the branch gates, and the branch gates are surrounded by the branch charnels. Consequently, the area of the channel is increased and the current capacity is enhanced. Thus, a thin-film transistor is obtained which takes a small area and has a large current capacity.
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