| 摘要 |
PROBLEM TO BE SOLVED: To obtain a dielectric porcelain capable of simultaneously backing together with an internal electrode mainly composed of Ag at a low temperature of <=1150 deg.C and having a high relative permittivity of >=2000 and good temperature characteristics. SOLUTION: This dielectric porcelain comprises main crystalline particles comprising peroviskite type compound oxide containing at least Ba and Ti as metal elements and grain boundary phase containing Si, Zn, Bi and Ti as at least metal element. In this case, Bi of grain boundary phase exists as crystalline particles comprising a compound oxide containing Bi ant Ti. It is desiable that Bi of grain boundary phase exists only as crystalline particles comprising a compound oxide containing Bi and Ti. |
