| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacture a semiconductor device which is restrained from increasing in contact resistance and junction leakage current, wherein a damaged layer is suppressed from being formed on the base of a contact, and the contact is prevented from being enlarged in diameter at the etching of the contact base. SOLUTION: A semiconductor coating layer 22 is formed, and then an interlayer insulating film 23 is formed thereon, a mask layer 24 with an opening patterned corresponding to a contact hole is provided thereon, a contact hole is cut penetrating through the mask layer 24 and the interlayer insulating film 23, etching is stopped at the surface of the semiconductor coating layer 22, a side wall layer is formed to cover the inner wall of the contact hole, the semiconductor coating layer is removed by etching from the base of the contact hole to make the semiconductor substrate exposed. |
