Method of fabricating a phase shift mask utilizing a defect repair machine

摘要

A method of fabricating a single layer phase shift mask is provided. The method is characterized by depositing an opaque layer by using a defect repair machine on a given place of the phase shift layer formed by a conventional method. The opaque layer is formed on the alignment mark. The single layer phase shift mask of the invention can provide better resolution for transferred patterns projected on the wafer and can avoid registration deviation and reduce a problem of misalignment of the alignment mark efficiently by decreasing the transmittance of the alignment mark, such as a reticule mark or a stepper mark.