| 摘要 |
PROBLEM TO BE SOLVED: To suppress excessive polishing only to a specific portion of a wafer by reversing the rotating direction of the wafer between polishing in a first step and polishing in a second step. SOLUTION: A wafer is positioned under a polishing head 4 of a primary polishing device 10a and the polishing head 4 descends, thereby executing primary polishing of the wafer. After finishing the primary polishing, the polishing head 4 rises and a plate 6 is conveyed onto a surface plate 11b of a primary polishing device 10b. At this time, the polishing head 4 of the primary polishing device 10b descends, thereby executing the primary polishing of the wafer again. The rotating direction of the surface plate 11b is reverse to the rotating direction of the surface plate 11a. Therefore, the flowing direction of slurry is reverse to the wafer. According to this method, excessive polishing only to a specific portion of the wafer is suppressed, the wafer with high flatness is obtained, and the operating performance is also remarkably improved. |
