| 摘要 |
A semiconductor device and a fabrication method thereof which are capable of enhancing the electrostatic capacity of a capacitor and preventing a short channel effect which occurs due to the decrease of a channel width. The semiconductor device includes a semiconductor substrate having a protrusion, a first insulation film formed on a lateral surface of the protrusion and on the semiconductor substrate neighboring with the protrusion, a conductive type sidewall spacer formed on the first insulation film, a first dopant region formed on an upper surface of the protrusion, a second dopant region formed in the semiconductor substrate in an outer portion from the conductive type sidewall spacer, an insulation film pattern formed on a surface of the conductive type sidewall spacer, a first conductive layer pattern contacting with the second dopant region and formed on the insulation film pattern, an interlayer insulation layer formed on an upper surface of the first conductive layer pattern, and a second conductive layer pattern formed on the interlayer insulation layer.
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