发明名称 |
Method to form a DRAM capacitor using low temperature reoxidation |
摘要 |
An embodiment of the present invention teaches a capacitor dielectric in a wafer cluster tool for semiconductor device fabrication formed by a method by the steps of: forming nitride adjacent a layer by rapid thermal nitridation; and subjecting the nitride to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing the presence of ultraviolet light and ozone gas, an ambient containing ozone gas or an ambient containing an NF3/ozone gas mixture.
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申请公布号 |
US5966595(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19970968382 |
申请日期 |
1997.11.12 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
THAKUR, RANDHIR P. S.;ROLFSON, BRETT |
分类号 |
H01L21/02;H01L21/314;H01L21/316;H01L21/318;(IPC1-7):H01L21/00;H01L21/324 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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