发明名称 |
Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle |
摘要 |
Techniques for measuring process induced damage, such as damage experienced during plasma etching or ion implementation, utilize a differential amplifier having multi-layer antennas (capacitors) of different sizes formed on respective inputs. Measurement of DELTA Ids (the difference between Ids1 and Ids2 off a MOSFET of the differential pair) or DELTA Idlin provides a sensitive and accurate measure of process induced damage. The techniques can be applied to monitor process induced damage while the manufacturing process is ongoing or as a measure of quality of the finished product.
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申请公布号 |
US5966024(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19970784325 |
申请日期 |
1997.01.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BUI, NGUYEN D.;ZHENG, SCOTT |
分类号 |
G01R31/26;H01L21/66;H01L23/544;(IPC1-7):G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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