发明名称 |
Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS |
摘要 |
The interconnects in a semiconductor device contacting metal lines comprise a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist comprises a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.
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申请公布号 |
US5965934(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19960681141 |
申请日期 |
1996.07.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHEUNG, ROBIN W.;CHANG, MARK S. |
分类号 |
H01L21/28;H01L21/027;H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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