发明名称 |
Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron |
摘要 |
A method for forming a P-type region in a semiconducting crystalline substrate by ion implantation is disclosed, wherein the implant species is an ionic molecule that contains titanium and boron.
|
申请公布号 |
US5965932(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19980073257 |
申请日期 |
1998.05.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ S.;ANJUM, MOHAMMED |
分类号 |
H01L21/265;H01L21/285;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|