| 摘要 |
In a semiconductor memory device, a characteristic changing circuit is connected with a signal line for transmitting an output control signal. If a fuse is normally blown, a fuse is blown together with a fuse for redundant replacement, and otherwise both fuses are not blown. If the fuse blowing is defective, the potential of a signal line is brought to a ground potential level based on a wafer test control signal. As a result, the output control signal is fixed at an L level, and the potential of a data input/output terminal is brought to a high impedance state. |
