Semiconductor device comprising silicon semiconductor layer

摘要

The principle portion of a semiconductor device is made from a polycrystalline silicon semiconductor layer which yields an X ray diffraction pattern or an electron beam pattern with the (311) diffraction peak intensity accounting for 15% or more of the total diffraction peak intensity. A semiconductor device improved in performance and reliability can be obtained by reducing the density of states at the boundary between the polycrystalline silicon film and the gate insulating film.