发明名称 |
High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced |
摘要 |
A process for fabricating a product including the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a plasma excited by a high frequency field provided by an inductive coupling structure in which the phase and anti-phase capacitive currents into the plasma are substantially balanced.
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申请公布号 |
US5965034(A) |
申请公布日期 |
1999.10.12 |
申请号 |
US19960739037 |
申请日期 |
1996.10.28 |
申请人 |
MC ELECTRONICS CO., LTD. |
发明人 |
VINOGRADOV, GEORGY;YONEYAMA, SHIMAO |
分类号 |
C23C16/50;C23C16/505;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H05H1/00 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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