发明名称 High frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balanced
摘要 A process for fabricating a product including the steps of subjecting a substrate to a composition of entities, at least one of the entities emanating from a species generated by a plasma excited by a high frequency field provided by an inductive coupling structure in which the phase and anti-phase capacitive currents into the plasma are substantially balanced.
申请公布号 US5965034(A) 申请公布日期 1999.10.12
申请号 US19960739037 申请日期 1996.10.28
申请人 MC ELECTRONICS CO., LTD. 发明人 VINOGRADOV, GEORGY;YONEYAMA, SHIMAO
分类号 C23C16/50;C23C16/505;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H05H1/00 主分类号 C23C16/50
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