发明名称 Method of fabricating a field emission display device having a silicon tip
摘要 To form a silicon tip having an undercut, a photoresist pattern having a vertical profile or a positive profile is formed on a silicon substrate and an under-cuted isotropic etching process is then performed using the photoresist pattern as a mask. First and second insulation films are formed on the silicon tip and the silicon substrate except for the silicon tip. The first insulation film is then separated from the second insulation film.
申请公布号 US5964629(A) 申请公布日期 1999.10.12
申请号 US19960754804 申请日期 1996.11.21
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 PARK, JONG MOON;KU, JIN KEON;KIM, KI HONG;HYEON, YEONG CHEOL;PARK, MIN
分类号 H01J9/02;(IPC1-7):H01J9/02 主分类号 H01J9/02
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