| 摘要 |
<p>PURPOSE:To apply a phase shift exposing method and to extend the degree of freedom in layout design for a mask for projection and exposure by providing the mask which individually forms a pattern. CONSTITUTION:For example, an aperture 2 whose width is 2.0mum and auxiliary apertures 4A and 4B whose width is 1.0mum are formed on the 1st mask 1A. The apertures 4A and 4B are arranged on both sides of the aperture 2 at I where the center-to-center distance thereof with the aperture 2 is 3.5mum. Then, phase shifters 6A and 6B consisting of an SiO2 layer whose thickness is about 4,700Angstrom are formed at the apertures 4A and 4B. In the same way, the aperture 3 whose width is 2.0mum and the auxiliary apertures 5A and 5B are formed on the 2nd mask 1B, and the phase shifters 7A and 7B are formed at the apertures 5A and 5B. By using the masks 1A and 1B, 1/5 reduction projection and exposure is performed to expose two adjacent patterns whose with is 0.4mum and whose center-to-center distance is 1.0mum in a photoresist layer on a projection surface. Thus, the phase shifter is formed regardless of the adjacent pattern and the phase shift exposing method is accomplished.</p> |
