METHOD FOR CONTINUOUS CHEMICAL LIQUID CLEANING OF POLYMER-COVERED SURFACES OF PARTS, PRIMARILY SEMICONDUCTOR PLATES

摘要

FIELD: electronic engineering. SUBSTANCE: method involves electrochemical treatment of sulfuric acid aqueous solution, treatment of plate surfaces with activated solution obtained, repeated electrochemical treatment, and cleaning of solution. Sulfur acid concentration is 5.5 to 6.5 V; plates are treated at temperature of 80 to 100 C. In this way, photoresist is easily removed from plates. Spent solutions are reconditioned for their reuse in continuous process; composition of etching solution is maintained stable. EFFECT: improved efficiency of process. 8 dwg, 5 tbl