| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor device provided with a level shift circuit in such a circuit structure as not using an extra charge pump and allowing a low dielectric level. SOLUTION: A semiconductor device comprises a transistor of a first conductivity type for inputting an input signal and a transistor of a second conductivity type for inputting an output signal from the first conductivity type transistor and further includes a level shift circuit for controlling the level of an output signal depending on an input signal IN. In this case, the level shift circuit 10 has a back gate control means for controlling the operation of the first conductivity type transistor and a voltage easing means for alleviating the voltage to be applied to the second conductivity type transistor.</p> |
