| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain an adequate pattern shape in a pattern forming method of forming resist patterns by subjecting a chemical amplification type resist contg. a polymer having an acid dissociation group of an acetal type to pattern exposure in a vacuum, thereby forming the patterns. SOLUTION: The chemical amplification type resist contg. the polymer having the acid dissociation group of the acetal type and an acid generating agent to generate an acid by irradiation with an energy beam is applied on a semiconductor substrate 11 to form a resist film 12 and thereafter, the resist film 12 is subjected to pattern exposure with electron rays 13 in the vacuum. The resist film 12 subjected to the pattern exposure is transferred from the inside of the vacuum into an atmosphere of about 50% in humidity and is rested for a suitable time, for example, 5 seconds in the atmosphere to humidify the resist film 12 and thereafter the semiconductor substrate 11 is placed at 100 deg.C and is heated for 60 seconds by a hot plate. When the exposed parts 12a of the resist film 12 are removed by developing the resist film 12 by the alkaline developer, the resist patterns 14 of the good pattern shape are obtd. |
