| 摘要 |
The invention concerns a structure comprising a massive substrate (10), in particular silicon, and a thin layer substrate (16) in semiconductor material, in particular a binary, ternary or quaternary III-V, IV-IV or II-VI material, mounted by an implantation process on said massive substrate surface, at least a photovoltaic cell (22), mounted by epitaxial deposit on the thin layer substrate and, on either side of the structure, contact outlets (24, 26) to the massive substrate and to the epitaxial cell. Advantageously, the massive substrate is made of silicon and incorporates another photovoltaic cell (28). The thin layer substrate material is selected from the group consisting of GaAs, InP, GaInP, ALGaAs, SiC, SiGe and II-VI alloys. |
