| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory cell of high reliability which allows very high integration, related to a semiconductor memory using epitaxial capacitor. SOLUTION: A process where a first electrode film 3 and a dielectrics film 4 are epitaxially grown on a semiconductor substrate 1, a process where a second electrode film 5 is formed on the dielectrics film 4 to form a laminating structure which is to be a capacitor, a process where a part of the laminating structure is removed to expose a surface of the semiconductor substrate 1, a process where a mono-crystal semiconductor layer 12 is epitaxially grown from an exposed surface 11 of the semiconductor substrate 1, and a process where a transistor is formed at the mono-crystal semiconductor layer 12, are provided. |
