| 摘要 |
<p>An insulating film is formed on an object by the plasma CVD method from a feed gas consisting mainly of a perfluorocycloolefin, preferably having three to eight carbon atoms, capable of yielding dissociation products in a plasma under discharge dissociation conditions. This method is capable of forming an insulating film which has a low relative permittivity, is dense and even, and is applicable to semiconductor devices, TFT displays, CCDs, printed boards, microchip modules, precision connectors, etc.</p> |
