CONTROL CIRCUIT OF VOLTAGE BOOSTER CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a control circuit of voltage booster circuit which enables reduction of current dissipation and improvement of data write operation rate in a semiconductor memory device. SOLUTION: The voltage booster circuits 1, 2 are connected in parallel to a load and operations of respective voltage booster circuits are controlled depending on outputs of corresponding comparing circuits 3, 4. Since different reference voltages Vref 1, 2 are applied respectively to these comparing circuits 3, 4, voltage boosting level and number of voltage booster circuits can be controlled automatically with a load condition of the voltage booster circuit. Therefore, the voltage can be impressed step by step in such a manner that a low voltage can be impressed in the former condition of write operation and a high voltage can be impressed in the latter condition thereof.