| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce costs with a simple manufacture and maintain stable characteristic ranging over a long term, by a method wherein there are provided with a metal outer frame, a ceramic substrate supported by the metal outer frame, a circuit wiring layer formed on the ceramic substrate, and a semiconductor device provided on the ceramic substrate in a state of connecting with the circuit wiring layer. SOLUTION: This semiconductor device is formed integrally with a ceramic substrate 12 inside an aluminum outer frame 11, and screw holes 13, 14 are formed at a center part of both ends of the aluminum outer frame 11, and the outer frame 11 is fixed to a heat sink 17 by screws. An upper face of the ceramic substrate 12 forming windows on an upper face of the outer frame 11 is exposed, and a specified electrode pattern is formed. The semiconductor device is a power switch device, and gate terminal electrodes G1, G2, collector terminal electrodes C1, C2, an emitter terminal electrode E1, and an emitter/ collector terminal electrode are patterned. Thus, it is possible to reduce costs with a simple manufacture and maintain stable characteristic ranging over a long term in an inferior heat environment.</p> |
