| 摘要 |
PROBLEM TO BE SOLVED: To hold high sub-threshold characteristic and suppress depletion capacitance of an electrode structure and reduce a junction leak current even when, in a semiconductor device, alignment precision is mitigated and a slight misalignment occurs at a position where the electrode structure is formed. SOLUTION: Wet-etching is performed on a silicon oxide film 21 on a substrate 1. At this time, the silicon oxide film 21 is equivalently etched and conditions of an etching time, etc., are adjusted, whereby a central part 22a which is band-shaped having a predetermined width is the thickest, and as going apart to a width direction, it is thinned gradually, thereby forming a mask 22 of a shape having an almost constant film thickness. Ions are implanted to the substrate 1 using this mask 22 and a well is formed imitating a shape of the mask 22. |
