| 摘要 |
PROBLEM TO BE SOLVED: To obtain a lithographic process for manufacturing a device using a multilayer mask, more specifically, a process such that it uses a reflection film having a multilayer film for pattern forming radiation. SOLUTION: In a lithographic process for manufacturing a semiconductor device, a mask 200 which has a multilayer thin film 210 formed on a substrate and on which a pattern is formed is irradiated with far-ultraviolet (EUV) radiation 245, and the radiation reflected from the mask 200 is directed to a layer made of an energy-sensitive material and formed on the substrate. The image of the pattern formed on the mask 200 is introduced to an energy-sensitive material. The image is then developed and transferred to the underlying substrate. A multilayer thin film 21 is inspected for defects by supplying a thin film (called inspection thin film), the energy-sensitive material placed close to the thin film 210 and having the energy-sensitive material exposed to the EUV radiation 235. The thin film 20 has such a thickness that part of the EUV radiation 245 can be projected through the inspection thin film and reflected into the inspection thin film from the thin film 210. The exposed inspection thin film is then developed and inspected to decide as to whether or not the inspection thin film indicates the presence of defects in the underlying multilayer thin film 210. |
