| 摘要 |
PROBLEM TO BE SOLVED: To provide an X-ray mask having no deviation in the position of a pattern for an X-ray absorber, by patterning the X-ray absorber made of such substance as to shut off the transmission of X-ray, and after that, adjusting the stress of the X-ray mask including the X-ray absorber. SOLUTION: A membrane is formed on a silicon substrate (S1), and then part of the silicon substrate is etched back until part of a rear face of the membrane is exposed. Then, an antireflection film is formed on the membrane and is baked. After that, an X-ray absorber is formed on the antireflection film (S2), and the stress of the X-ray absorber is so adjusted that the mean stress is zero (S3). Then, a resist is applied to the X-ray absorber, baked, and patterned. With the patterned resist as a mask, the X-ray absorber is dry-etched to be patterned (S4), and then the resist is removed. When a deviation in position axists in the pattern of the X-ray absorber, the stress of the X-ray mask is adjusted. |
