MAGNETIC RELUCTANCE ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an element having magnetic reluctance effect wherein large magnetic reluctance ratio which can be used for a memory element even at room temperature and low magnetic field. SOLUTION: La1-x Srx MnO3 (x>0.17) of large Sr composition which becomes ferromagnetic substance and La1-x Srx MnO3 (x<0.17) of small Sr composition which becomes paramagnetic insulator are used for a tunnel insulation film 3. Since La1-x Srx MnO3 of the same constituent element is used for an insulation film 5, spin scattering of an interface can be restrained and furthermore, a film thickness can be controlled by film formation. Therefore, it is excellent in uniformity of element characteristics unlike the one composed of Fe/Al2 O3 . If an insulation film is constructed to be held by ferromagnetic metal and alloy such as La1-x Srx MnO3 and Fe, CO, Ni, it is easy to use as a memory.