| 摘要 |
PROBLEM TO BE SOLVED: To provide an FRAM(ferroelectric random access memory) of low- power consumption which allows first reading/writing. SOLUTION: Cells comprising transistors 601-606 and ferroelectric capacitors 501-506 are allocated in matrix, and leak conductance 301-306 of the ferroelectric capacitors 501-506 are intentionally increased, so that leak conductance 401-406 flowing from internal nodes N601 -N606 to a substrate, etc., at weighting are canceled, for constant electric potential of the internal nodes N601 -N6 O6 at always. AS a result, stable polarization, is kept, and refresh operation which is characteristics of a plate electric potential fixed type FRAM is not required. |
